The SI7940DP-T1-E3 is a 2 N-Channel TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 1.4W and a drain to source breakdown voltage of 12V. The device is lead free and RoHS compliant. It is available in a small outline package with a package quantity of 3000 units per reel. The MOSFET has a drain to source resistance of 17mR and a gate to source voltage of 8V. It is suitable for surface mount applications.
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI7940DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 7.6A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 17mR |
| Fall Time | 50ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 30ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7940DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7940DP-T1-E3 to view detailed technical specifications.
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