P-channel MOSFET with 30V drain-source breakdown voltage and 7A continuous drain current. Features low 20mΩ drain-source on-resistance and 15ns fall time. Operates from -55°C to 150°C with 1.4W maximum power dissipation. Surface mountable in an 8-pin SOIC package, supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI7945DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | -30V |
| Drain-source On Resistance-Max | 20MR |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Nominal Vgs | 20V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 130ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7945DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7945DP-T1-GE3 to view detailed technical specifications.
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