P-channel PowerPAK SO surface mount MOSFET with a -60V drain-source voltage and 3.2A continuous drain current. Features a low 64mΩ maximum drain-source on-resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Includes fast switching characteristics with 8ns turn-on delay and 9ns fall time. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
Quick Jump:
Technical Specifications
Vishay SI7949DP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | -60V |
| Drain-source On Resistance-Max | 64mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 64mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7949DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7949DP-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
