N-channel MOSFET with 150V drain-source voltage and 2.6A continuous drain current. Features low 105mΩ Rds(on) and 1.4W maximum power dissipation. Designed for surface mount applications with an 8-pin PowerPAK SO package. Operates across a wide temperature range from -55°C to 150°C. Lead-free and RoHS compliant.
MountingSurface Mount
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Technical Specifications
Vishay SI7956DP-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Voltage (Vdss) | 150V |
| FET Type | 2 N-Channel |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7956DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7956DP-T1-GE3 to view detailed technical specifications.
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