The SI7962DP-T1-E3 is a 2 N-Channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 40V and a continuous drain current of 7.1A. The device is packaged in a SOIC package and is mounted using surface mount techniques. It is RoHS compliant and has a maximum power dissipation of 1.4W.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power1.4W
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Technical Specifications
Vishay SI7962DP-T1-E3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7.1A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 17mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 55ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7962DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7962DP-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.