N-channel Power MOSFET with 20V drain-source voltage and 8.8A/11A continuous drain current. Features dual configuration in an 8-pin PowerPAK SO surface-mount package with no leads. Offers low on-resistance of 22mOhm/15mOhm at 10V Vgs and typical gate charge of 17.5nC/22.5nC at 10V Vgs. Maximum power dissipation is 3100mW/3400mW, operating temperature range from -55°C to 150°C.
PackagePowerPAK SO
MountingSurface Mount
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Technical Specifications
Vishay Si7980DP technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package/Case | PowerPAK SO |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 5.89 |
| Package Height (mm) | 1.04 |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±16V |
| Maximum Continuous Drain Current | 8.8@Channel 1|11@Channel 2A |
| Maximum Drain Source Resistance | 22@10V@Channel 1|15@10V@Channel 2mOhm |
| Typical Gate Charge @ Vgs | 17.5@10V|[email protected]@Channel 1|22.5@10V|[email protected]@Channel 2nC |
| Typical Gate Charge @ 10V | 17.5@Channel 1|22.5@Channel 2nC |
| Typical Input Capacitance @ Vds | 1010@10V@Channel 1|1370@10V@Channel 2pF |
| Maximum Power Dissipation | 3100@Channel 1|3400@Channel 2mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si7980DP Datasheet
Download the complete datasheet for Vishay Si7980DP to view detailed technical specifications.
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