N-channel MOSFET featuring 20V drain-source breakdown voltage and 5.3A continuous drain current. Offers a low 37mΩ maximum drain-source on-resistance at 8V gate-source voltage. Designed for surface mount applications with a compact 2x2 4-MFP package, exhibiting fast switching speeds with turn-on delay of 30ns and fall time of 145ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.47W.
MountingSurface Mount
PolarityN-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8402DB-T1-E1 technical specifications.
General
Continuous Drain Current (ID)
5.3A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
37mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
37MR
Fall Time
145ns
Gate to Source Voltage (Vgs)
8V
Height
0.014inch
Lead Free
Lead Free
Length
0.062inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.47W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.47W
Radiation Hardening
No
Rds On Max
37mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
30ns
Width
0.063inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI8402DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8402DB-T1-E1 to view detailed technical specifications.
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