N-channel MOSFET featuring 20V drain-source breakdown voltage and 5.3A continuous drain current. Offers a low 37mΩ maximum drain-source on-resistance at 8V gate-source voltage. Designed for surface mount applications with a compact 2x2 4-MFP package, exhibiting fast switching speeds with turn-on delay of 30ns and fall time of 145ns. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.47W.
MountingSurface Mount
PolarityN-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8402DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 37MR |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.014inch |
| Lead Free | Lead Free |
| Length | 0.062inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.47W |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 30ns |
| Width | 0.063inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8402DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8402DB-T1-E1 to view detailed technical specifications.
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