The SI8405DB-T1-E1 is a P-CHANNEL junction field-effect transistor from Vishay, featuring a maximum continuous drain current of 3.6A and a drain to source voltage of 12V. It has a maximum drain to source resistance of 55mR and a maximum power dissipation of 1.47W. The device is packaged in a surface mount S-PBGA-B4 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8405DB-T1-E1 technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.47W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8405DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8405DB-T1-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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