P-channel MOSFET, 20V drain-source voltage, 5.8A continuous drain current. Features 27mΩ maximum drain-source on-resistance and 1.47W maximum power dissipation. Operates from -55°C to 150°C with a 8V gate-source voltage. Surface mountable in a 2x2 6-MFP package, supplied on tape and reel.
MountingSurface Mount
PolarityP-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8407DB-T2-E1 technical specifications.
General
Continuous Drain Current (ID)
5.8A
Drain to Source Resistance
27mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
27mR
Fall Time
45ns
Gate to Source Voltage (Vgs)
8V
Height
0.014inch
Lead Free
Lead Free
Length
0.094inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.47W
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.47W
Radiation Hardening
No
Rds On Max
27mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
520ns
Turn-On Delay Time
30ns
Width
0.079inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI8407DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8407DB-T2-E1 to view detailed technical specifications.
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