P-channel MOSFET with 30V Drain-Source Voltage (Vdss) and 4.6A Continuous Drain Current (ID). Features a low Drain-Source On Resistance (Rds On) of 46mR and a Drain to Source Resistance of 1.052R. Operates with a Gate to Source Voltage (Vgs) of 12V, offering fast switching with a 20ns Turn-On Delay Time and 35ns Fall Time. This surface-mount component, packaged in tape and reel, has a maximum power dissipation of 1.47W and operates across a temperature range of -55°C to 150°C.
MountingSurface Mount
PolarityP-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8409DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Resistance | 1.052R |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 46MR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.36mm |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.47W |
| Rds On Max | 46mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 140ns |
| Turn-On Delay Time | 20ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8409DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8409DB-T1-E1 to view detailed technical specifications.
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