P-channel MOSFET with 20V drain-source voltage and 4.8A continuous drain current. Features 48mΩ maximum drain-source on-resistance and 1.47W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a 1.6mm x 1.6mm x 0.36mm package, supplied on tape and reel. Turn-on delay time is 31ns, fall time is 50ns, and turn-off delay time is 105ns.
MountingSurface Mount
PolarityP-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8413DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.36mm |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.47W |
| Radiation Hardening | No |
| Rds On Max | 48mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 105ns |
| Turn-On Delay Time | 31ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8413DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8413DB-T1-E1 to view detailed technical specifications.
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