P-channel MOSFET with 20V drain-source voltage and 4.8A continuous drain current. Features 48mΩ maximum drain-source on-resistance and 1.47W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Surface mountable in a 1.6mm x 1.6mm x 0.36mm package, supplied on tape and reel. Turn-on delay time is 31ns, fall time is 50ns, and turn-off delay time is 105ns.
MountingSurface Mount
PolarityP-CHANNEL
Power1.47W
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Technical Specifications
Vishay SI8413DB-T1-E1 technical specifications.
General
Continuous Drain Current (ID)
4.8A
Drain to Source Resistance
48mR
Drain to Source Voltage (Vdss)
20V
Fall Time
50ns
Gate to Source Voltage (Vgs)
12V
Height
0.36mm
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.47W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.47W
Radiation Hardening
No
Rds On Max
48mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
105ns
Turn-On Delay Time
31ns
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI8413DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8413DB-T1-E1 to view detailed technical specifications.
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