The SI8415DB-T1-E1 is a P-CHANNEL TrenchFET MOSFET from Vishay with a continuous drain current of 5.3A and a drain to source voltage of 12V. It features a drain to source resistance of 37mR and is suitable for surface mount applications. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.47W. The SI8415DB-T1-E1 is RoHS compliant and available in tape and reel packaging.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI8415DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.47W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 37mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 180ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8415DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8415DB-T1-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
