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Technical Specifications
Vishay SI8417DB-T2-E1 technical specifications.
General
Continuous Drain Current (ID)
9.7A
Drain to Source Breakdown Voltage
-12V
Drain to Source Resistance
21mR
Drain to Source Voltage (Vdss)
12V
Fall Time
240ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
2.22nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.57W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.9W
Radiation Hardening
No
Rds On Max
21mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
380ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8417DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8417DB-T2-E1 to view detailed technical specifications.
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