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Technical Specifications
Vishay SI8441DB-T2-E1 technical specifications.
General
Continuous Drain Current (ID)
10.5A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
80mR
Drain to Source Voltage (Vdss)
20V
Fall Time
10ns
Gate to Source Voltage (Vgs)
5V
Input Capacitance
600pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
13W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.77W
Rds On Max
80mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
35ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8441DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8441DB-T2-E1 to view detailed technical specifications.
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