P-channel MOSFET with a Drain-Source Voltage (Vdss) of -20V and a continuous Drain Current (ID) of -3.7A. Features a low Drain-Source On Resistance (Rds On) of 100mR, a threshold voltage of -1V, and an input capacitance of 610pF. Designed for surface mount applications with a 4-pin Micro Foot package, operating from -40°C to 150°C. This RoHS compliant component offers fast switching with a fall time of 10ns and turn-on delay of 15ns.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8461DB-T2-E1 technical specifications.
General
Continuous Drain Current (ID)
-3.7A
Drain to Source Resistance
136mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
100mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
8V
Input Capacitance
610pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
780mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
35ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8461DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8461DB-T2-E1 to view detailed technical specifications.
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