P-channel MOSFET with a Drain-Source Voltage (Vdss) of -20V and a continuous Drain Current (ID) of -3.7A. Features a low Drain-Source On Resistance (Rds On) of 100mR, a threshold voltage of -1V, and an input capacitance of 610pF. Designed for surface mount applications with a 4-pin Micro Foot package, operating from -40°C to 150°C. This RoHS compliant component offers fast switching with a fall time of 10ns and turn-on delay of 15ns.
Vishay SI8461DB-T2-E1 technical specifications.
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