P-channel MOSFET with a Drain-Source Voltage (Vdss) of -20V and a continuous Drain Current (ID) of -3.7A. Features a low Drain-Source On Resistance (Rds On) of 100mR, a threshold voltage of -1V, and an input capacitance of 610pF. Designed for surface mount applications with a 4-pin Micro Foot package, operating from -40°C to 150°C. This RoHS compliant component offers fast switching with a fall time of 10ns and turn-on delay of 15ns.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8461DB-T2-E1 technical specifications.
General
| Continuous Drain Current (ID) | -3.7A |
| Drain to Source Resistance | 136mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 100mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 780mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8461DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8461DB-T2-E1 to view detailed technical specifications.
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