SI8469DB-T2-E1

Name: SI8469DB-T2-E1 Vishay
Brand: Vishay
SKU: SI8469DB-T2-E1

MOSFET 8V 4.6A 1.8W 64mOhms @ 4.5

MountingSurface Mount

PolarityP-CHANNEL

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Vishay SI8469DB-T2-E1 technical specifications.

Continuous Drain Current (ID)	4.6A
Drain to Source Resistance	64mR
Drain to Source Voltage (Vdss)	8V
Drain-source On Resistance-Max	64mR
Fall Time	17ns
Gate to Source Voltage (Vgs)	5V
Input Capacitance	900pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.8W
Mount	Surface Mount
Number of Channels	1
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Radiation Hardening	No
Rds On Max	64mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	35ns
Turn-On Delay Time	15ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.