P-channel MOSFET, surface mount, BGA package. Features -12V drain-source voltage (Vdss) and -16A continuous drain current (ID). Offers low 26mR drain-to-source resistance (Rds On Max) and 13W maximum power dissipation. Operates across a -55°C to 150°C temperature range with fast switching times, including 20ns turn-on and fall times.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8483DB-T2-E1 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
-16A
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
-12V
Fall Time
20ns
Gate to Source Voltage (Vgs)
10V
Height
0.31mm
Input Capacitance
1.84nF
Length
1.5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
13W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
26mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-400mV
Turn-Off Delay Time
80ns
Turn-On Delay Time
20ns
Width
1mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI8483DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8483DB-T2-E1 to view detailed technical specifications.
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