P-channel MOSFET, surface mount, BGA package. Features -12V drain-source voltage (Vdss) and -16A continuous drain current (ID). Offers low 26mR drain-to-source resistance (Rds On Max) and 13W maximum power dissipation. Operates across a -55°C to 150°C temperature range with fast switching times, including 20ns turn-on and fall times.
PackageBGA
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI8483DB-T2-E1 technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | -16A |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.31mm |
| Input Capacitance | 1.84nF |
| Length | 1.5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 13W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 20ns |
| Width | 1mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8483DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8483DB-T2-E1 to view detailed technical specifications.
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