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Technical Specifications
Vishay SI8487DB-T1-E1 technical specifications.
General
| Continuous Drain Current (ID) | -7.7A |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.24nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -600mV |
| Turn-Off Delay Time | 290ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8487DB-T1-E1 Datasheet
Download the complete datasheet for Vishay SI8487DB-T1-E1 to view detailed technical specifications.
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