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Technical Specifications
Vishay SI8497DB-T2-E1 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
13A
Drain to Source Resistance
53mR
Drain to Source Voltage (Vdss)
30V
Fall Time
22ns
Gate to Source Voltage (Vgs)
12V
Input Capacitance
1.32nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
13W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
53mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
75ns
Turn-On Delay Time
50ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8497DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8497DB-T2-E1 to view detailed technical specifications.
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