N-channel MOSFET with 8V drain-source voltage (Vdss) and 3.5A continuous drain current (ID). Features low 44mR drain-source resistance and a maximum on-resistance of 54mR at 5V gate-source voltage. This surface-mount component utilizes a BGA package and offers fast switching with a 5ns turn-on delay and 7ns fall time. Operates across a -55°C to 150°C temperature range, with 900mW maximum power dissipation.
PackageBGA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI8802DB-T2-E1 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
3.5A
Drain to Source Resistance
44mR
Drain to Source Voltage (Vdss)
8V
Drain-source On Resistance-Max
54mR
Fall Time
7ns
Gate to Source Voltage (Vgs)
5V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Nominal Vgs
350mV
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
54mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
22ns
Turn-On Delay Time
5ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI8802DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8802DB-T2-E1 to view detailed technical specifications.
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