N-channel MOSFET transistor featuring a 12V drain-to-source voltage and 3.9A continuous drain current. Offers a low 35mΩ drain-to-source resistance at a 4.5V gate-to-source voltage. This surface-mount component is housed in a compact BGA package with dimensions of 0.84mm x 0.84mm x 0.213mm. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 7ns turn-on delay and 12ns fall time.
PackageBGA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI8806DB-T2-E1 technical specifications.
General
Package/Case
BGA
Continuous Drain Current (ID)
3.9A
Drain to Source Resistance
35mR
Drain to Source Voltage (Vdss)
12V
Fall Time
12ns
Gate to Source Voltage (Vgs)
8V
Height
0.213mm
Lead Free
Lead Free
Length
0.84mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
900mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
43mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
30ns
Turn-On Delay Time
7ns
Width
0.84mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI8806DB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8806DB-T2-E1 to view detailed technical specifications.
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