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Technical Specifications
Vishay SI8810EDB-T2-E1 technical specifications.
General
| Package/Case | BGA |
| Continuous Drain Current (ID) | 2.1A |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 245pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 900mW |
| Radiation Hardening | No |
| Rds On Max | 72mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8810EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8810EDB-T2-E1 to view detailed technical specifications.
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