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Technical Specifications
Vishay SI8851EDB-T2-E1 technical specifications.
General
| Continuous Drain Current (ID) | 16.7A |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 6.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8851EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8851EDB-T2-E1 to view detailed technical specifications.
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