Vishay
SI8900EDB-T2-E1
TRANSISTOR 5400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, MICRO FOOT, 10 PIN, FET General Purpose Small Signal
TRANSISTOR 5400 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, MICRO FOOT, 10 PIN, FET General Purpose Small Signal
Resistance0.04R
MountingSurface Mount
PolarityN-CHANNEL
Power1W
Quick Jump:
Technical Specifications
Vishay SI8900EDB-T2-E1 technical specifications.
General
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 4500ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Rds On Max | 24mR |
| Resistance | 0.04R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 55000ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8900EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8900EDB-T2-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
