Quick Jump:
Technical Specifications
Vishay SI8902EDB-T2-E1 technical specifications.
General
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 3000ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17000ns |
| Turn-On Delay Time | 1000ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8902EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8902EDB-T2-E1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
