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Technical Specifications
Vishay SI8904EDB-T2-E1 technical specifications.
General
| Continuous Drain Current (ID) | 3.8A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2000ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 45mR |
| Resistance | 0.045R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 1500ns |
| Turn-On Delay Time | 1600ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI8904EDB-T2-E1 Datasheet
Download the complete datasheet for Vishay SI8904EDB-T2-E1 to view detailed technical specifications.
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