The SI9407AEY is a P-channel MOSFET with a continuous drain current rating of 3.5A and a drain to source voltage of -60V. It has a drain to source resistance of 150mR and a gate to source voltage of 20V. The device is packaged in a SO package with dimensions of 5mm in length, 4mm in width, and 1.55mm in height. The MOSFET operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 3W.
PackageSO
PolarityP-CHANNEL
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Technical Specifications
Vishay SI9407AEY technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Number of Channels | 1 |
| Package Quantity | 100 |
| Polarity | P-CHANNEL |
| RoHS Compliant | No |
| Series | SI9 |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI9407AEY Datasheet
Download the complete datasheet for Vishay SI9407AEY to view detailed technical specifications.
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