P-channel, small-signal MOSFET for general-purpose applications. Features a 60V drain-source voltage and 3.2A continuous drain current. Offers low on-resistance of 120mΩ at a 10V gate-source voltage. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 5W. Packaged in a surface-mount SOIC-8 package, this component is RoHS compliant.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power5W
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Technical Specifications
Vishay SI9407BDY-T1-GE3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3.2A
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
120mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Input Capacitance
600pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
5W
Radiation Hardening
No
Rds On Max
120mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
40ns
Turn-On Delay Time
30ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI9407BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9407BDY-T1-GE3 to view detailed technical specifications.
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