N-channel MOSFET, 30V Vdss, 6.2A continuous drain current, and 24mR Rds On. Features a 1V threshold voltage and 1V nominal Vgs, with a 20V gate-to-source voltage rating. Operates across a -55°C to 150°C temperature range with 1.5W max power dissipation. Packaged in an 8-pin SOIC for surface mounting, this component offers fast switching with 10ns turn-on and 11ns fall times.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI9410BDY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.01787oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9410BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9410BDY-T1-GE3 to view detailed technical specifications.
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