P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 4.5A and a drain-to-source voltage of -20V. Offers a low drain-to-source resistance of 40mR. Operates within a temperature range of -55°C to 150°C and supports surface mounting in a compact SOIC package. This component is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI9433BDY-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.5A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
-20V
Fall Time
30ns
Gate to Source Voltage (Vgs)
12V
Height
1.55mm
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
SI9
Threshold Voltage
-1.5V
Turn-Off Delay Time
65ns
Turn-On Delay Time
40ns
Weight
0.01787oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI9433BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9433BDY-T1-GE3 to view detailed technical specifications.
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