P-channel MOSFET, designed for general-purpose small signal applications. Features a continuous drain current of 4.1A and a drain-to-source voltage of -30V. Offers a low drain-source on-resistance of 42mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Packaged in an 8-pin SO (SOP-8) surface-mount package, supplied on tape and reel. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power1.3W
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Technical Specifications
Vishay SI9435BDY-T1-E3 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
4.1A
Drain to Source Resistance
42mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
42mR
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Height
1.55mm
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
-1V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.3W
Radiation Hardening
No
Rds On Max
42mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
42ns
Turn-On Delay Time
14ns
Weight
0.006596oz
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI9435BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI9435BDY-T1-E3 to view detailed technical specifications.
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