High-side MOSFET gate driver IC with 1A output current capability. Features a 16.5V drain-to-source voltage and operates from a 10.8V to 16.5V supply. This through-hole component offers a 135ns propagation delay and 35ns fall time. Packaged in an 8-pin PDIP, it supports a maximum power dissipation of 700mW and is RoHS compliant.
PackagePDIP
MountingThrough Hole
Power700mW
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Technical Specifications
Vishay SI9910DJ-E3 technical specifications.
General
Package/Case
PDIP
Drain to Source Voltage (Vdss)
16.5V
Fall Time
35ns
Height
3.81mm
Input Bias Current
1uA
Lead Free
Lead Free
Length
10.92mm
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Output Current
1A
Max Power Dissipation
700mW
Max Supply Current
500uA
Max Supply Voltage
16.5V
Min Supply Voltage
10.8V
Mount
Through Hole
Number of Drivers
1
Number of Outputs
1
On-State Resistance
100mR
Operating Supply Current
500uA
Output Current
1A
Package Quantity
500
Packaging
Rail/Tube
Power Dissipation
700mW
Propagation Delay
135ns
Radiation Hardening
No
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Turn-On Delay Time
135ns
Weight
0.032805oz
Width
7.11mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI9910DJ-E3 Datasheet
Download the complete datasheet for Vishay SI9910DJ-E3 to view detailed technical specifications.
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