N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element JFET, offers 20V Drain to Source Breakdown Voltage and 20V Drain to Source Voltage (Vdss). Features include 6.2A Continuous Drain Current (ID) and 20mΩ Drain to Source Resistance. Operating temperature range spans -55°C to 150°C with a Max Power Dissipation of 1.14W. Packaged in SO, this RoHS compliant component has a 50ns Fall Time, 31ns Turn-Off Delay Time, and 35ns Turn-On Delay Time.
PackageSO
PolarityN-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI9926BDY-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Number of Channels | 2 |
| Package Quantity | 100 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.14W |
| RoHS Compliant | Yes |
| Series | SI9 |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9926BDY-E3 Datasheet
Download the complete datasheet for Vishay SI9926BDY-E3 to view detailed technical specifications.
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