N-Channel Silicon FET, 2-Element, Surface Mount, SOP-8 package. Features 20V Drain to Source Breakdown Voltage, 6.2A Continuous Drain Current, and 20mΩ Max Drain-Source On Resistance. Operates from -55°C to 150°C with 1.14W Max Power Dissipation. Includes 35ns Turn-On Delay and 50ns Fall Time. RoHS compliant.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI9926BDY-T1-E3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 20mR |
| Fall Time | 50ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.55mm |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.14W |
| Mount | Surface Mount |
| Nominal Vgs | 600mV |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.14W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.01787oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9926BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI9926BDY-T1-E3 to view detailed technical specifications.
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