VISHAY

SI9926BDY-T1-GE3

2-Ch N-Ch JFET, 20V, 6.2A ID, 20mR RdsOn, SO Package

Vishay

SI9926BDY-T1-GE3

Name: SI9926BDY-T1-GE3 Vishay
Brand: Vishay
SKU: SI9926BDY-T1-GE3

2-Ch N-Ch JFET, 20V, 6.2A ID, 20mR RdsOn, SO Package

N-Channel Silicon FET, 2-element, Surface Mount SOP-8 package. Features 20V Drain to Source Voltage (Vdss), 6.2A Continuous Drain Current (ID), and 20mR Drain to Source Resistance (Rds On Max). Operates from -55°C to 150°C with a maximum power dissipation of 1.14W. Includes 35ns turn-on delay and 15ns fall time.

PackageSO

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Vishay SI9926BDY-T1-GE3 technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	6.2A
Drain to Source Resistance	20mR
Drain to Source Voltage (Vdss)	20V
Fall Time	15ns
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	12V
Height	1.55mm
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.14W
Mount	Surface Mount
Nominal Vgs	600mV
Number of Channels	2
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Rds On Max	20mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	31ns
Turn-On Delay Time	35ns
Weight	0.01787oz
Width	4mm