Vishay
SI9948AEY-T1
Power Field-Effect Transistor, 2.6A I(D), 60V, 0.17ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
PackageSO
PolarityP-CHANNEL
Power2.4W
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Technical Specifications
Vishay SI9948AEY-T1 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.4W |
| RoHS Compliant | No |
| Series | SI9 |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.006596oz |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI9948AEY-T1 Datasheet
Download the complete datasheet for Vishay SI9948AEY-T1 to view detailed technical specifications.
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