
P-channel power MOSFET in SO package, featuring -60V drain-source voltage and 2.6A continuous drain current. Offers 170mΩ drain-to-source resistance and operates across a -55°C to 175°C temperature range. Includes fast switching characteristics with 8ns turn-on delay and 12ns fall time, supporting up to 2.4W power dissipation. Packaged on tape and reel for high-volume applications.
Vishay SI9948AEY-T1-E3 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | -60V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.4W |
| Nominal Vgs | -1V |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | SI9 |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.006596oz |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI9948AEY-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
