P-Channel MOSFET, 20V Drain-Source Voltage, 8.8A Continuous Drain Current, and 30mΩ Max Drain-Source On Resistance. Features include 12ns Turn-On Delay Time, 40ns Turn-Off Delay Time, and 100ns Fall Time. This surface mount component operates from -55°C to 150°C with a Max Power Dissipation of 3.5W. RoHS compliant and packaged in Tape and Reel.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA411DJ-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 30mR |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA411DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA411DJ-T1-GE3 to view detailed technical specifications.
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