P-channel MOSFET with a -20V drain-source voltage and 12A continuous drain current. Features low 30mΩ drain-source on-resistance and a fast 52ns fall time. Operates from -55°C to 150°C with a maximum power dissipation of 19W. Surface mountable in an SC package, this component is RoHS compliant.
PackageSC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA419DJ-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 30MR |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Nominal Vgs | -1V |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 30mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 91ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA419DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA419DJ-T1-GE3 to view detailed technical specifications.
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