Vishay
SiA425EDJ-T1-GE3
Single Quad Drain Dual Source Power MOSFET, Enhancement Mode, 20V, 4.5A, 2900mW, SOT-23
The SiA425EDJ-T1-GE3 is a single quad drain dual source power MOSFET from Vishay, featuring an enhancement mode configuration with a maximum drain source voltage of 20V and a maximum continuous drain current of 4.5A. It has a maximum power dissipation of 2900mW and operates within a temperature range of -55°C to 150°C. The device is packaged in a PowerPAK SC-70 with a 6-pin count and measures 2.05mm in length, 2.05mm in width, and 0.75mm in height. It is suitable for surface mount applications.
PackagePowerPAK SC-70
MountingSurface Mount
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Technical Specifications
Vishay SiA425EDJ-T1-GE3 technical specifications.
General
| Package Family Name | SOT |
| Package/Case | PowerPAK SC-70 |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2.05 |
| Package Width (mm) | 2.05 |
| Package Height (mm) | 0.75 |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Dual Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 4.5A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Maximum Power Dissipation | 2900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Vishay SiA425EDJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SiA425EDJ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.