P-channel Power MOSFET featuring -40V drain-source voltage and -12A continuous drain current. Offers a low 47mΩ drain-to-source resistance at a nominal 1.2V gate-source voltage. Designed for surface mounting with a compact 2.05mm x 2.05mm x 0.75mm footprint, this component boasts a maximum power dissipation of 19W and operates across a wide temperature range of -55°C to 150°C. It is halogen-free and RoHS compliant, packaged in tape and reel for efficient assembly.
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SIA441DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -12A |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | -40V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 890pF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Nominal Vgs | -1.2V |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 47mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA441DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA441DJ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
