N-channel MOSFET transistor, 60V drain-source voltage, 12A continuous drain current, and 32mΩ drain-source resistance. Features include 7ns turn-on delay, 6ns fall time, and 380pF input capacitance. Operates within a -55°C to 150°C temperature range with a maximum power dissipation of 19W. Surface mountable in a 6-pin PowerPAK SC-70 package.
MountingSurface Mount
PolarityN-CHANNEL
Power3.5W
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Technical Specifications
Vishay SIA442DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.5W |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
| Series | TrenchFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 7ns |
| Width | 2.05mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SIA442DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA442DJ-T1-GE3 to view detailed technical specifications.
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