N-channel power MOSFET featuring 150V drain-source voltage and 7.7A continuous drain current. Offers a low 177mΩ maximum drain-source on-resistance. Designed for surface mount applications with a compact SC-70 package, measuring 2.05mm x 2.05mm x 0.75mm. Includes fast switching characteristics with a 5ns turn-on delay and 10ns fall time. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 19W.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SIA446DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 165mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 230pF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 177mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | ThunderFET® |
| Threshold Voltage | 3.5V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 5ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA446DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA446DJ-T1-GE3 to view detailed technical specifications.
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