VISHAY

SIA448DJ-T1-GE3

N-Channel MOSFET, 20V, 12A, 15mR Rds On, Surface Mount

Vishay

SIA448DJ-T1-GE3

Name: SIA448DJ-T1-GE3 Vishay
Brand: Vishay
SKU: SIA448DJ-T1-GE3

N-Channel MOSFET, 20V, 12A, 15mR Rds On, Surface Mount

N-channel MOSFET transistor featuring a 20V drain-to-source voltage and 12A continuous drain current. Offers a low 15mΩ drain-to-source resistance at 10V gate-to-source voltage, with a threshold voltage of 400mV. Designed for surface mount applications with a compact 2.05mm x 2.05mm x 0.75mm footprint. Supports a maximum power dissipation of 19.2W and operates across a wide temperature range from -55°C to 150°C.

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Vishay SIA448DJ-T1-GE3 technical specifications.

General

Continuous Drain Current (ID)	12A
Drain to Source Resistance	15mR
Drain to Source Voltage (Vdss)	20V
Gate to Source Voltage (Vgs)	8V
Height	0.75mm
Input Capacitance	1.38nF
Length	2.05mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	19.2W
Mount	Surface Mount
Number of Channels	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	15mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	400mV
Turn-Off Delay Time	30ns
Turn-On Delay Time	8ns
Width	2.05mm