P-channel MOSFET with -20V drain-source voltage and -12A continuous drain current. Features low 33mΩ drain-to-source resistance at 4.5V gate-source voltage and a maximum power dissipation of 17.9W. This surface-mount component operates from -55°C to 150°C and is packaged in tape and reel. Includes 1.3nF input capacitance and a threshold voltage of -400mV.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA461DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -12A |
| Drain to Source Resistance | 33mR |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 1.3nF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 17.9W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 33mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -400mV |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 20ns |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA461DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA461DJ-T1-GE3 to view detailed technical specifications.
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