
P-channel MOSFET with 20V drain-source voltage and 4.5A continuous drain current. Features low 94mΩ drain-source resistance and 6.5W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Surface mountable in a compact SC70-6 package, ideal for space-constrained applications. RoHS compliant and supplied on tape and reel for automated assembly.
Vishay SIA811DJ-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 94mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 355pF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 94mR |
| Resistance | 0.094R |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000988oz |
| Width | 2.05mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SIA811DJ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
