The SIA813DJ-T1-GE3 is a P-CHANNEL MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 6.5W and a drain to source resistance of 94mR. The device is surface mount and packaged in tape and reel. It is RoHS compliant and part of the LITTLE FOOT series.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA813DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 3.6A |
| Drain to Source Resistance | 94mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 355pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 94mR |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA813DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA813DJ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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