Quick Jump:
Technical Specifications
Vishay SIA911EDJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 192mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 101mR |
| Resistance | 0.101R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 990ns |
| Turn-On Delay Time | 32ns |
| Weight | 0.000988oz |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA911EDJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA911EDJ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
