The SIA912DJ-T1-E3 is a 2-channel N-channel power MOSFET from Vishay with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 4.5A and a drain to source voltage of 12V. The device has a maximum power dissipation of 1.9W and a drain to source resistance of 40mR. It is available in a tape and reel packaging with 3000 units per package.
PolarityN-CHANNEL
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Technical Specifications
Vishay SIA912DJ-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Series | SIA |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 5ns |
| Weight | 0.000988oz |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA912DJ-T1-E3 Datasheet
Download the complete datasheet for Vishay SIA912DJ-T1-E3 to view detailed technical specifications.
No datasheet is available for this part.