N-Channel MOSFET, 12V Drain-Source Breakdown Voltage, 4.5A Continuous Drain Current, and 40mΩ Max Drain-Source On Resistance at 4.5V. Features 1.9W Max Power Dissipation, 150°C Max Operating Temperature, and 5ns Turn-On Delay Time. This surface-mount component offers 400pF Input Capacitance and is RoHS Compliant.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power1.9W
Quick Jump:
Technical Specifications
Vishay SIA912DJ-T1-GE3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 40MR |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.9W |
| Mount | Surface Mount |
| Nominal Vgs | 1V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.9W |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 5ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA912DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA912DJ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
